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SUP40P10-43
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
Gate-Body Leakage
V DS
V GS(th)
Δ V DS /T J
Δ V GS(th) /T J
I GSS
V GS = 0 V, I D = - 250 μA
V DS = V GS , I D = - 250 μA
I D = - 250 μA
I D = - 250 μA
V DS = 0 V, V GS = ± 20 V
- 100
-1
- 109
5.9
-3
± 100
V
mV/°C
nA
V DS = - 100 V, V GS = 0 V
-1
Zero Gate Voltage Drain Current
I DSS
V DS = - 100 V, V GS = 0 V, T J = 125 °C
- 50
μA
V DS = - 100 V, V GS = 0 V, T J = 150 °C
- 200
On-State Drain Current a
I D(on)
V DS = - 5 V, V GS = - 10 V
V GS = - 10 V, I D = - 10 A
- 40
0.036
0.043
A
Forward Transconductance
Drain-Source On-State Resistance a
a
R DS(on)
g fs
V GS = - 10 V, I D = - 10 A, T J = 125 °C
V GS = - 10 V, I D = - 10 A, T J = 150 °C
V GS = - 4.5 V, I D = - 8 A
V DS = - 15 V, I D = - 10 A
0.040
38
0.078
0.088
0.048
Ω
S
Dynamic b
Input Capacitance
C iss
4600
Gate-Source Charge
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge c
c
Gate-Drain Charge c
C oss
C rss
Q g
Q gs
Q gd
V GS = 0 V, V DS = - 50 V, f = 1 MHz
V DS = - 50 V, V GS = - 10 V, I D = - 10 A
V DS = - 50 V, V GS = - 4.5 V, I D = - 10 A
230
175
106
54
14
26
160
81
pF
nC
Rise Time
Gate Resistance
Time c
Turn-On Delay
c
Turn-Off Delay Time c
Fall Time c
c
Turn-On Delay Time
Rise Time c
Turn-Off Delay Time c
R g
t d(on)
t r
t d(off)
t f
t d(on)
t r
t d(off)
f = 1.0 MHz
V DD = - 50 V, R L = 6.3 Ω
I D ? - 8 A, V GEN = - 10 V, R g = 1.0 Ω
V DD = - 50 V, R L = 6.3 Ω
I D ? 8 A, V GEN = - 4.5 V, R g = 1.0 Ω
0.8
4
15
20
110
100
42
160
100
8
25
30
165
150
65
240
150
Ω
ns
Fall Time c
t f
100
150
Source-Drain Diode Ratings and Characteristics T C = 25 °C b
Continuous Current
Pulsed Current
I S
I SM
- 40
- 40
A
Forward Voltage a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
V SD
t rr
I RM(REC)
Q rr
I F = - 10 A, V GS = 0 V
I F = - 8 A, dI/dt = 100 A/μs
- 0.8
60
-5
150
- 1.5
90
- 7.5
225
V
ns
A
nC
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 65458
S09-2035-Rev. A, 05-Oct-09
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